? semiconductor components industries, llc, 2015 may, 2015 ? rev. 2 1 publication order number: nss40302p/d nss40302pdr2g complementary 40 v, 6.0 a, low v ce(sat) transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage npn pnp v ceo 40 ?40 vdc collector-base voltage npn pnp v cbo 40 ?40 vdc emitter-base voltage npn pnp v ebo 6.0 ?7.0 vdc collector current ? continuous npn pnp i c 3.0 ?3.0 a collector current ? peak npn pnp i cm 6.0 ?6.0 a electrostatic discharge esd hbm class 3b mm class c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. device package shipping ? ordering information nss40302pdr2g soic?8 (pb?free) 2500 / tape & reel device marking soic?8 case 751 style 16 www. onsemi.com 40 volts, 6.0 amps complementary low v ce(sat) transistor equivalent r ds(on) 80 m collector 7,8 2 base 1 emitter collector 5,6 4 base 3 emitter 1 8 c40302 ayww 1 8 c40302 = specific device code a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location) NSV40302PDR2G soic?8 (pb?free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
nss40302pdr2g www. onsemi.com 2 thermal characteristics characteristic symbol max unit single heated total device dissipation (note 1) t a = 25 c derate above 25 c p d 576 4.6 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 217 c/w total device dissipation (note 2) t a = 25 c derate above 25 c p d 676 5.4 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 185 c/w dual heated (note 3) total device dissipation (note 1) t a = 25 c derate above 25 c p d 653 5.2 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 191 c/w total device dissipation (note 2) t a = 25 c derate above 25 c p d 783 6.3 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 160 c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr? 4 @ 10 mm 2 , 1 oz. copper traces, still air. 2. fr? 4 @ 100 mm 2 , 1 oz. copper traces, still air. 3. dual heated values assume total power is the sum of two equally powered devices.
nss40302pdr2g www. onsemi.com 3 npn electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 40 ? ? vdc collector ?base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 40 ? ? vdc emitter ?base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 6.0 ? ? vdc collector cutoff current (v cb = 40 vdc, i e = 0) i cbo ? ? 0.1 adc emitter cutoff current (v eb = 6.0 vdc) i ebo ? ? 0.1 adc on characteristics dc current gain (note 5) (i c = 10 ma, v ce = 2.0 v) (i c = 500 ma, v ce = 2.0 v) (i c = 1.0 a, v ce = 2.0 v) (i c = 2.0 a, v ce = 2.0 v) h fe 200 200 180 180 400 350 340 320 ? ? ? ? collector ?emitter saturation voltage (note 5) (i c = 0.1 a, i b = 0.010 a) (i c = 1.0 a, i b = 0.100 a) (i c = 1.0 a, i b = 0.010 a) (i c = 2.0 a, i b = 0.200 a) v ce(sat) ? ? ? ? 0.008 0.044 0.080 0.082 0.011 0.060 0.115 0.115 v base ?emitter saturation voltage (note 5) (i c = 1.0 a, i b = 0.01 a) v be(sat) ? 0.780 0.900 v base ?emitter turn?on voltage (note 5) (i c = 0.1 a, v ce = 2.0 v) v be(on) ? 0.650 0.750 v cutoff frequency (i c = 100 ma, v ce = 5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = 0.5 v, f = 1.0 mhz) cibo ? 320 450 pf output capacitance (v cb = 3.0 v, f = 1.0 mhz) cobo ? 40 50 pf switching characteristics delay (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t d ? ? 100 ns rise (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t r ? ? 100 ns storage (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t s ? ? 780 ns fall (v cc = 30 v, i c = 750 ma, i b1 = 15 ma) t f ? ? 110 ns 4. pulsed condition: pulse width = 300 sec, duty cycle 2%. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
nss40302pdr2g www. onsemi.com 4 pnp electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 madc, i b = 0) v (br)ceo ?40 ? ? vdc collector ?base breakdown voltage (i c = ?0.1 madc, i e = 0) v (br)cbo ?40 ? ? vdc emitter ?base breakdown voltage (i e = ?0.1 madc, i c = 0) v (br)ebo ?7.0 ? ? vdc collector cutoff current (v cb = ?40 vdc, i e = 0) i cbo ? ? ?0.1 adc emitter cutoff current (v eb = ?6.0 vdc) i ebo ? ? ?0.1 adc on characteristics dc current gain (note 5) (i c = ?10 ma, v ce = ?2.0 v) (i c = ?500 ma, v ce = ?2.0 v) (i c = ?1.0 a, v ce = ?2.0 v) (i c = ?2.0 a, v ce = ?2.0 v) h fe 250 220 180 150 380 340 300 230 ? ? ? ? collector ?emitter saturation voltage (note 5) (i c = ?0.1 a, i b = ?0.010 a) (i c = ?1.0 a, i b = ?0.100 a) (i c = ?1.0 a, i b = ?0.010 a) (i c = ?2.0 a, i b = ?0.200 a) v ce(sat) ? ? ? ? ?0.013 ?0.075 ?0.130 ?0.135 ?0.017 ?0.095 ?0.170 ?0.170 v base ?emitter saturation voltage (note 5) (i c = ?1.0 a, i b = ?0.01 a) v be(sat) ? ?0.780 ?0.900 v base ?emitter turn?on voltage (note 5) (i c = ?0.1 a, v ce = ?2.0 v) v be(on) ? ?0.660 ?0.750 v cutoff frequency (i c = ?100 ma, v ce = ?5.0 v, f = 100 mhz) f t 100 ? ? mhz input capacitance (v eb = ?0.5 v, f = 1.0 mhz) cibo ? 250 300 pf output capacitance (v cb = ?3.0 v, f = 1.0 mhz) cobo ? 50 65 pf switching characteristics delay (v cc = ?30 v, i c = ?750 ma, i b1 = ?15 ma) t d ? ? 60 ns rise (v cc = ?30 v, i c = ?750 ma, i b1 = ?15 ma) t r ? ? 120 ns storage (v cc = ?30 v, i c = ?750 ma, i b1 = ?15 ma) t s ? ? 400 ns fall (v cc = ?30 v, i c = ?750 ma, i b1 = ?15 ma) t f ? ? 130 ns 5. pulsed condition: pulse width = 300 sec, duty cycle 2%.
nss40302pdr2g www. onsemi.com 5 npn typical characteristics figure 1. collector emitter saturation voltage vs. collector current figure 2. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.02 0.06 0.10 0.12 0.16 10 1 0.1 0.01 0.001 0 0.05 0.10 0.15 0.20 0.25 0.30 figure 3. dc current gain vs. collector current figure 4. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 100 200 300 500 600 10 1 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.8 1.0 figure 5. base emitter turn?on voltage vs. collector current figure 6. saturation region i c , collector current (a) i b , base current (a) 10 1 0.1 0.01 0.001 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 0.1 0.01 0.001 0.0001 0 0.1 0.3 0.4 0.5 0.7 0.9 1.0 v ce(sat) , collector?emitter saturation voltage (v) v ce(sat) , collector?emitter saturation voltage (v) h fe , dc current gain v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter turn?on voltage (v) v ce(sat) , collector?emitter voltage (v) i c /i b = 10 150 c 25 c ?55 c i c /i b = 100 150 c 25 c ?55 c 400 150 c (5.0 v) 150 c (2.0 v) 25 c (5.0 v) 25 c (2.0 v) ?55 c (5.0 v) ?55 c (2.0 v) 0.9 i c /i b = 10 150 c 25 c ?55 c 0.6 v ce = +2.0 v 150 c 25 c ?55 c 0.2 0.6 0.8 100 ma 1 a 2 a 3 a 0.04 0.08 0.14 700 0.2
nss40302pdr2g www. onsemi.com 6 npn typical characteristics figure 7. input capacitance figure 8. output capacitance v eb , emitter?base voltage (v) v cb , collector?base voltage (v) 6 5 4 3 2 1 0 150 175 200 250 300 400 35 30 25 20 15 10 5 0 10 20 30 40 50 60 70 80 c ibo , input capacitance (pf) c obo , output capacitance (pf) 40 c obo (pf) c ibo (pf) 350 225 275 325 375 figure 9. safe operating area 10 ms 100 ms 1 s thermal limit 1 ms v ce (v dc ) 100 1.0 0.1 0.01 0.001 0.1 10 i c (a) 1.0 10 single pulse test at t a = 25 c 0.01 figure 10. collector current as a function of collector emitter voltage v ce , collector?emitter voltage (v) 2.0 1.6 1.2 0.8 0.6 0.2 0 0 0.5 2.0 3.5 i c , collector current (a) i b = 12 ma 1.0 1.5 2.5 3.0 0.4 1.0 1.4 1.8 10 ma 8 ma 6 ma 4 ma 2 ma
nss40302pdr2g www. onsemi.com 7 pnp typical characteristics figure 11. collector emitter saturation voltage vs. collector current figure 12. collector emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) ?10 ?1 ?0.1 ?0.01 ?0.001 0 ?0.05 ?0.10 ?0.15 ?0.20 ?0.25 ?10 ?1 ?0.1 ?0.01 ?0.001 0 ?0.05 ?0.10 ?0.15 ?0.20 ?0.25 ?0.30 figure 13. dc current gain vs. collector current figure 14. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) ?10 ?1 ?0.1 ?0.01 ?0.001 0 100 200 300 500 600 700 800 ?10 ?1 ?0.1 ?0.01 ?0.001 ?0.3 ?0.4 ?0.5 ?0.6 ?0.7 ?0.8 ?1.0 ?1.1 figure 15. base emitter turn?on voltage vs. collector current figure 16. saturation region i c , collector current (a) i b , base current (a) ?10 ?1 ?0.1 ?0.01 ?0.001 ?0.2 ?0.3 ?0.4 ?0.5 ?0.7 ?0.8 ?0.9 ?1.0 ?0.1 ?0.01 ?0.001 ?0.0001 0 ?0.2 ?0.6 ?0.8 ?1.0 ?1.4 ?1.8 ?2.0 v ce(sat) , collector?emitter saturation voltage (v) v ce(sat) , collector?emitter saturation voltage (v) h fe , dc current gain v be(sat) , base?emitter saturation voltage (v) v be(on) , base?emitter turn?on voltage (v) v ce(sat) , collector?emitter voltage (v) i c /i b = 10 150 c 25 c ?55 c i c /i b = 100 150 c 25 c ?55 c 400 150 c (5.0 v) 150 c (2.0 v) 25 c (5.0 v) 25 c (2.0 v) ?55 c (5.0 v) ?55 c (2.0 v) ?0.9 i c /i b = 10 150 c 25 c ?55 c ?0.6 v ce = ?2.0 v 150 c 25 c ?55 c ?0.4 ?1.2 ?1.6 100 ma 1 a 2 a 3 a
nss40302pdr2g www. onsemi.com 8 pnp typical characteristics figure 17. input capacitance figure 18. output capacitance v eb , emitter base voltage (v) v cb , collector base voltage (v) ?6 ?5 ?4 ?3 ?2 ?1 0 100 150 200 250 300 350 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 30 40 50 60 70 80 90 100 c ibo , input capacitance (pf) c obo , output capacitance (pf) ?40 c obo (pf) c ibo (pf) figure 19. safe operating area 10 ms 100 ms 1 s thermal limit 1 ms v ce (v dc ) ?100 ?1 ?0.1 ?0.01 ?0.001 ?0.1 ?10 i c (a) ?1 ?10 single pulse test at t a = 25 c ?0.01 figure 20. output capacitance v ce , collector?emitter voltage (v) 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 ?3.0 ?3.5 i c , collector current (a) i b = ?20 ma ?10 ma ?8 ma ?6 ma ?4 ma ?2 ma ?2.0 ?1.6 ?1.2 ?0.8 ?0.6 ?0.2 0 ?0.4 ?1.0 ?1.4 ?1.8 ?12 ma ?14 ma ?18 ma ?16 ma
nss40302pdr2g www. onsemi.com 9 package dimensions soic?8 nb case 751?07 issue ak seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 16: pin 1. emitter, die #1 2. base, die #1 3. emitter, die #2 4. base, die #2 5. collector, die #2 6. collector, die #2 7. collector, die #1 8. collector, die #1 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nss40302p/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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